The drain voltageof the circuit is 1.8 V, and the ratioisfor,and

SPICE schematic circuit is shown in Figure 1.

The simulation procedure is as follows:

First, set the transistor parameters.

Select the NMOS enhancement device, go to “EDIT” in the toolbar select “MODEL”.

The “EDIT MODEL” dialog box appears as shown in figure 2.

Select “Edit instance Model (Text)” in the dialog box shown in figure 2 and enter the design objective parameters of the NMOS transistor as shown in figure 3.

Double click on the transistor symbol and edit the parametersandtoandrespectively as shown in the Figure 4.

Select “analysis-setup” and enable only DC sweep and chooseas the sweep variable and setup the sweep fromtoin increments ofas shown in Figure 5.

Simulate the circuit.

After simulating,

The plot betweenandis shown in Figure 6.

(a)

Observe from the Figure 6,

Therefore, output currentis obtained at.

(b)

Consider Figure 1, itsvalue is changed to -100 mV.

Therefore,

Observe from Figure 6,

Therefore, atthe output current is.

Consider Figure 1, itsvalue is changed to +100 mV.

Therefore,

Observe from Figure 6,

Therefore, atthe output current is.

(c)Consider the Figure 1,

Simulate the circuit.

After simulating,

The plot betweenandis shown in Figure 7.

Observe from the Figure 7,

The output voltage atis, the output current is.

Therefore the output impedance is

Therefore, the output impedance is.

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